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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBF5460LT1/D JFET General Purpose Transistor P-Channel 2 SOURCE 3 GATE MMBF5460LT1 1 DRAIN 3 1 2 MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Symbol VDG VGSR IGF Value 40 40 10 Unit Vdc Vdc mAdc CASE 318 - 08, STYLE 10 SOT- 23 (TO - 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA TJ, Tstg 556 - 55 to +150 Unit mW mW/C C/W C DEVICE MARKING MMBF5460LT1 = 6E ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Gate-Source Breakdown Voltage (IG = 10 Adc, VDS = 0) Gate Reverse Current (VGS = 20 Vdc, VDS = 0) (VGS = 20 Vdc, VDS = 0, TA = 100C) Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 1.0 Adc) Gate Source Voltage (VDS = 15 Vdc, ID = 0.1 mAdc) V(BR)GSS IGSS -- -- VGS(off) VGS 0.75 0.5 -- -- -- -- 5.0 1.0 6.0 4.0 nAdc Adc Vdc Vdc 40 -- -- Vdc ON CHARACTERISTICS Zero-Gate-Voltage Drain Current (VDS = 15 Vdc, VGS = 0) IDSS -1.0 -- - 5.0 mAdc SMALL-SIGNAL CHARACTERISTICS Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Equivalent Short-Circuit Input Noise Voltage (VDS = 15 Vdc, VGS = 0, RG = 1.0 M, f = 100 Hz, BW = 1.0 Hz) 1. FR- 5 = 1.0 |Yfs| |yos| Ciss Crss en 1000 -- -- -- -- -- -- 5.0 1.0 20 4000 75 7.0 2.0 -- mhos mhos pF pF nV Hz 0.75 0.062 in. Thermal Clad is a trademark of the Bergquist Company Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, Inc. 1997 1 MMBF5460LT1 DRAIN CURRENT versus GATE SOURCE VOLTAGE 4.0 3.5 I D, DRAIN CURRENT (mA) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VGS, GATE-SOURCE VOLTAGE (VOLTS) 1.8 2.0 TA = - 55C 25C 125C VDS = 15 V Yfs FORWARD TRANSFER ADMITTANCE (m mhos) 4000 3000 2000 FORWARD TRANSFER ADMITTANCE versus DRAIN CURRENT 1000 700 500 300 200 0.2 0.3 1.0 0.5 0.7 ID, DRAIN CURRENT (mA) VDS = 15 V f = 1.0 kHz 2.0 3.0 4.0 Figure 1. VGS(off) = 2.0 Volts Yfs FORWARD TRANSFER ADMITTANCE (m mhos) Figure 4. VGS(off) = 2.0 Volts 10 9.0 I D, DRAIN CURRENT (mA) 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 0.5 1.5 2.0 2.5 3.0 1.0 VGS, GATE-SOURCE VOLTAGE (VOLTS) 3.5 4.0 TA = - 55C 25C 125C VDS = 15 V 10000 7000 5000 3000 2000 1000 700 500 0.5 0.7 1.0 2.0 3.0 ID, DRAIN CURRENT (mA) 5.0 VDS = 15 V f = 1.0 kHz 7.0 Figure 2. VGS(off) = 4.0 Volts Yfs FORWARD TRANSFER ADMITTANCE (m mhos) Figure 5. VGS(off) = 4.0 Volts 16 14 I D, DRAIN CURRENT (mA) 12 10 8.0 6.0 4.0 2.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 VGS, GATE-SOURCE VOLTAGE (VOLTS) 7.0 8.0 TA = - 55C 25C 125C VDS = 15 V 10000 7000 5000 3000 2000 1000 700 500 0.5 0.7 1.0 2.0 3.0 ID, DRAIN CURRENT (mA) VDS = 15 V f = 1.0 kHz 5.0 7.0 10 Figure 3. VGS(off) = 5.0 Volts Figure 6. VGS(off) = 5.0 Volts 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data MMBF5460LT1 r oss , OUTPUT RESISTANCE (k ohms) 1000 700 500 300 200 IDSS = 3.0 mA 100 70 50 30 20 10 0.1 0.2 0.5 1.0 2.0 ID, DRAIN CURRENT (mA) 5.0 10 6.0 mA 10 mA 10 VDS = 15 V f = 1.0 kHz C, CAPACITANCE (pF) 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 Coss Crss 10 20 30 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 40 Ciss f = 1.0 MHz VGS = 0 Figure 7. Output Resistance versus Drain Current Figure 8. Capacitance versus Drain-Source Voltage 5.0 VDS = 15 V VGS = 0 RG = 1.0 Megohm 10 9.0 NF, NOISE FIGURE (dB) 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 VDS = 15 V VGS = 0 f = 100 Hz NF, NOISE FIGURE (dB) 4.0 3.0 2.0 1.0 0 10 20 30 50 100 200 300 500 1000 2000 3000 f, FREQUENCY (Hz) 10,000 0 1.0 10 100 1000 RS, SOURCE RESISTANCE (k Ohms) 10,000 Figure 9. Noise Figure versus Frequency Figure 10. Noise Figure versus Source Resistance vi Crss Ciss ross Coss | yfs | vi COMMON SOURCE y PARAMETERS FOR FREQUENCIES BELOW 30 MHz yis = j Ciss yos = j Cosp * + 1/ross yfs = yfs | yrs = -j Crss * Cosp is Coss in parallel with Series Combination of Ciss and Crss. NOTE: 1. Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Figure 11. Equivalent Low Frequency Circuit Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 MMBF5460LT1 INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT-23 SOT-23 POWER DISSIPATION The power dissipation of the SOT-23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT-23 package, PD can be calculated as follows: PD = TJ(max) - TA RJA SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150C - 25C 556C/W = 225 milliwatts The 556C/W for the SOT-23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. 4 Motorola Small-Signal Transistors, FETs and Diodes Device Data MMBF5460LT1 PACKAGE DIMENSIONS A L 3 BS 1 2 STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 V G C D H K J DIM A B C D G H J K L S V CASE 318-08 ISSUE AE SOT-23 (TO-236AB) Motorola Small-Signal Transistors, FETs and Diodes Device Data 5 MMBF5460LT1 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303-675-2140 or 1-800-441-2447 JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 81-3-3521-8315 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 INTERNET: http://motorola.com/sps 6 MMBF5460LT1/D Motorola Small-Signal Transistors, FETs and Diodes Device Data |
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